600MHz-700MHz 50W GaN RF Signal Jammer Module with Power Amplifier and Circulator

The 600MHz-700MHz 50W GaN RF Signal Jammer Module with Power Amplifier and Circulator offers exceptional performance for jamming signals in critical communication ranges. This module is equipped with a high-efficiency GaN (Gallium Nitride) chip, which provides significant advantages over traditional LDMOS technology. Key benefits include superior work efficiency, enhanced heat dissipation due to its ceramic tube shell, and increased stability in operation. Additionally, the GaN chip is designed to avoid damage in an open-circuit state, ensuring long-term reliability. The module comes with a range of power output options, including 10W, 20W, 30W, 40W, 50W, and 60W, allowing users to select the optimal power level for their specific needs. This flexibility ensures that the module can deliver effective jamming over varying distances, providing comprehensive coverage for applications in security, defense, and communications disruption. The integration of the power amplifier and circulator