FS150R12KT4, Infineon, IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode
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FS150R12KT4, Infineon, IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode

$85.00
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Product Information Item Details Product Model FS150R12KT4 Manufacturer Infineon Type IGBT Module with Trench/Fieldstop IGBT4 and EmCon4 Diode Package Type EconoPACK™3 Weight 300 g Key Specifications Category Parameter Value Unit Maximum Ratings Collector-Emitter Voltage (VCES) 1200 V Continuous Collector Current (IC) 150 (Tc = 90°C, Tj = 175°C) A Pulse Collector Current (ICP) 300 (1 ms) A Power Dissipation (PTOT) 750 (Tc = 25°C, Tj = 175°C) W Gate-Emitter Voltage (VGES) ±20 V Junction Temperature (Tj) -40 to +175 °C Isolation Voltage (VISO) 2.5 kV (RMS, 50 Hz, 1 min) V Electrical Characteristics Collector-Emitter Saturation Voltage (VCE(sat)) 1.75 - 2.20 (Typical range depending on Tj) V Gate Threshold Voltage (VGE(th)) 5.2 - 6.4 V Input Capacitance (Cies) 9.35 nF Switching Time (ton) 0.115 - 0.135 (Typical range depending on Tj) µs Thermal Resistance (Rth(j-c)) 0.20 (IGBT), 0.375 (Diode) K/W Forward Voltage (VF) 1.65 - 2.15 (Typical ra

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