M09200 - SEMI M92 - Specification for 4H-SIC Homoepitaxial Wafer

 1  Purpose1.1  This Specification covers requirements for 4H-SiC homoepitaxial wafers used in power device manufacturing.1.2  This Specification provides a uniform standard of 4H-SiC homoepitaxial wafers for the suppliers and the customers in the industrial chain.2  Scope2.1  This Specification specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grown on an n-type substrate, up to and including 30 µm total thickness.2.2  Dimensional requirements are provided for the following categories of epitaxial wafers:• 100.0 mm 4H-SiC epitaxial wafers• 150.0 mm 4H-SiC epitaxial wafers Referenced SEMI Standards (purchase separately)SEMI M1 — Specification for Polished Single Crystal Silicon WafersSEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished WafersSEMI M55 — Specification for Polished Monocrystalline Silicon Carbide WafersSEMI M59 — Terminology for Silicon TechnologySEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbid